Bulletin of the American Physical Society
APS March Meeting 2019
Volume 64, Number 2
Monday–Friday, March 4–8, 2019; Boston, Massachusetts
Session C39: Spin-orbit Coupling in Semiconductors
2:30 PM–5:30 PM,
Monday, March 4, 2019
BCEC Room: 207
Sponsoring Units: GMAG DCMP DMP
Chair: Vlad Pribiag, University of Minnesota
Abstract: C39.00002 : Enhancement of the Spin-Orbit Coupling in Silicon by Bismuth Doping
3:06 PM–3:18 PM
To compare the spin-orbit coupling strength in the Si channel with and without Bi doping (SOI:P:B and SOI:P, respectively), we measured quantum corrections to the conductance in function of temperature. The elastic diffusion length (Le), the spin-orbit coupling length (Lso) and the phase coherence length (Lφ) can be extracted from the magnetoconductance data by using the Hikami-Larkin-Nagaoka model. Le has the same order of magnitude (10 nm-25 nm) for both samples, however Lφ decreased after the Bi doping (with the strongest decrease from 177 nm to 35 nm at 2 K). In the case of SOI:P:Bi, the Bi doping induced a spin-orbit coupling length of the same order of magnitude with the phase coherence length (Lso= 54 nm and Lφ= 35 nm at 2K).
The increased spin-orbit coupling strength led to observe the crossover between the WL and the WAL. These results demonstrate a control over the strength of the spin-orbit coupling in Si channel using Bi doping.
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