Energy Spectra of Few-Electron Si Quantum Dots*

In this talk, we theoretically study the energy spectra of multielectron dots in Si/SiGe quantum wells, including valley effects and disorder at the quantum well interface. Our computational method combines tight-binding (TB) calculations with a full configuration interaction (FCI) scheme to study silicon quantum dots. While TB provides an accurate description of single electron wavefunctions by taking microscopic effects like interface disorder into account, and captures the valley physics of silicon, FCI allows us to calculate multielectron energies and corresponding wavefunctions by including the effects of electron-electron interactions. We use this computational tool to investigate the properties of valley and orbital states in Si/SiGe quantum dots in the experimentally relevant regime with the goal of being able to tune these devices in a more predictable way.