Monolayers*

Dilute magnetic semiconductors have drawn researchers’ attention over the last decade, driven by the advent of spintronics. Transition metal dichalcogenides (TMDs) have demonstrated great potential for new generation spintronics owing to their unique structural and electronic properties. Experimental and theoretical efforts have been made to understand the role of magnetic impurities in TMDs, such as Mn, Fe, Co, and Ni.¹ Theoretical studies show that Fe-substitution in Mo site leads to spin-polarized states and can achieve room temperature ferromagnetic ordering and clustering.²

Here, we demonstrate direct growth of Fe-doped monolayer (ML) MoS₂ via the chemical vapor deposition. We obtained Fe-doped ML MoS₂ with an average crystal size of 40 μm. We observed a PL peak at 1.78 eV, a 70 MeV eV redshift from 1.85 eV obtained from undoped ML MoS₂ synthesized in our lab. Scanning transmission electron microscopy images show Fe atoms substituted Mo atoms. X-ray photoelectron spectroscopy will be performed to quantitatively analyze the doping concentration. We will then correlate the growth recipe with its doping concentration for the optimized growth of Fe-doped MoS₂ monolayers.

1. C. Jia et al., RSC Adv., 2018, 8, 18837
2. Y. Wang et al., Mat. & Des., 2017, 121, 77