STM written nano-device and 2DEG measurements using pre-implanted contacts

A streamlined method is used to contact and measure either nano-devices written using STM hydrogen resist lithography dosed with phosphine or surface gated MOSFET (metal-oxide semiconductor field effect transistors) using heavily doped implant regions made before any device fabrication. This process inversion allows the elimination of electron beam lithography for contacting and allow a greater fraction of processing to occur at the wafer scale, as opposed to the chip scale. The process method and results from both STM written nano-devices and MOSFETs showing good contact integrity will be discussed.