-V Devices: Signatures of the Charge Density Wave Transistions*

A strong interest in quasi 2D and quasi 1D Van der Waals materials has led to a renewed attention to layered materials with the charge density wave (CDW) effects. The switching between CDW phases can be utilized for electronic applications. This explains the motivations behind the search for new polymorphs of materials with CDW properties near room temperature. We fabricated devices on recently discovered polymorph of niobium trisulfide, NbS₃-V. The material has been prepared by the CVT method. The devices were fabricated using the shadow mask on exfoliated NbS₃-V. At T=290 K, we observed two orders-of-magnitude reduction in the electrical resistance. The effect was attributed to the CDW phase transition. This conclusion is supported by ab initio calculations of the phonon dispersion, X-ray diffraction and Raman spectroscopy. M. A. Bloodgood et. al., APL - Materials (accepted 2017).