Disorder-driven metal-insulator transition in Pt doped 1T-TiSe2*

We have conducted a multipronged investigation, which involves transport, Angle Resolved Photoemission Spectroscopy (ARPES) and Scanning Tunneling Spectroscopy (STS) measurements and theoretical modeling, of pristine and Pt doped 1T-TiSe₂, a canonical Charge Density Wave (CDW) material. Transport data finds that at temperatures much lower than CDW transition temperature (T_CDW), 1T-TiSe₂ shows metallic behavior, while Pt doped samples display insulating behavior. STS reveals the formation of CDW domains with a large Mott gap separated by metallic or semi-metallic domain walls with a small pseudogap. We will present results obtained from a theoretical modeling of transport via the network of domain walls. Our combined study indicates an unconventional disorder-driven metal-insulator transition in Pt doped 1T-TiSe₂ samples.