Long Range Intrinsic Magnetic Order in Bulk Semiconducting MoTe<sub>2</sub> and MoSe<sub>2</sub>

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APS March Meeting 2018

Volume 63, Number 1

Monday–Friday, March 5–9, 2018; Los Angeles, California

Session V35: 2D Materials -Magnetism and Magnetotransport I

2:30 PM–5:18 PM, Thursday, March 8, 2018
LACC Room: 409B

Sponsoring Units: DMP GMAG
Chair: Elizabeth McCormick, Ohio State Univ - Columbus

Abstract ID: BAPS.2018.MAR.V35.5

Abstract: V35.00005 : Long Range Intrinsic Magnetic Order in Bulk Semiconducting MoTe₂ and MoSe₂

3:18 PM–3:30 PM

Abstract

Presenter:

Alexander Kerelsky
(Columbia Univ)

Authors:

Alexander Kerelsky
(Columbia Univ)

Zurab Guguchia
(Columbia Univ)

Drew Edelberg
(Columbia Univ)

Soham Banerjee
(Columbia Univ)

Fabian Rohr
(Princeton)

Declan Scullion
(Queen's University)

Mathias Augustin
(Queen's University)

Daniel Rhodes
(Columbia Univ)

Zurab Shermadini
(Paul Scherrer Institute)

Hubertus Luetkens
(Paul Scherrer Institute)

Alexander Shengelaya
(Tbislisi State University)

Christopher Baines
(Paul Scherrer Institute)

Elvezio Morenzoni
(Paul Scherrer Institute)

Alex Amato
(Paul Scherrer Institute)

Rustem Khasanov
(Paul Scherrer Institute)

James Hone
(Columbia Univ)

Simon J Billinge
(Columbia Univ)

Elton Santos
(Queen's University)

Yasutomo Uemura
(Columbia Univ)

Abhay Pasupathy
(Columbia Univ)

The search for semiconducting materials with intrinsic dilute magnetism has been an ongoing challenge for many years. The semiconducting transition metal dichalcogenides have drawn great interest due to a wide array of electrical and optical applications. In this work, we report the direct observation of long-range magnetic order below T_M=40K and T_M=100K in bulk 2H-MoTe2 and 2H-MoSe2 respectively by muon spin relaxation/rotation (µSR). To investigate the origin of the long-range magnetic order, we perform scanning tunneling microscopy (STM) which reveals a uniform density of intrinsic defects in the materials. Atomic-resolution STM reveals that the primary defects are substitutions of chalcogen atoms, likely by molybdenum. Hubbard density functional theory (DFT) simulations predict that these molybdenum substitutional defects induce magnetic moments at defect sites with long range interaction. Scanning tunneling spectroscopy taken at defect sites is also in confirmation with the L-DOS calculated via the DFT simulations . Thus, we conclude that the long range magnetic order observed via µSR is native to the materials, due to interacting intrinsic magnetic defects.

To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2018.MAR.V35.5

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Bulletin of the American Physical Society

APS March Meeting 2018

Volume 63, Number 1

Monday–Friday, March 5–9, 2018; Los Angeles, California

Session V35: 2D Materials -Magnetism and Magnetotransport I

Abstract: V35.00005 : Long Range Intrinsic Magnetic Order in Bulk Semiconducting MoTe2 and MoSe2

Presenter:

Authors:

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Abstract: V35.00005 : Long Range Intrinsic Magnetic Order in Bulk Semiconducting MoTe₂ and MoSe₂