*

As an emerging silicon-based two-dimensional (2D) semiconductor, silicon telluride (Si₂Te₃) with unique properties and potential applications in electronics and photonics has recently attracted much attention. We will present our recent studies on this 2D material through both experimental and theoretical investigations. The Si₂Te₃ layered nanostructures was deposited by a Chemical Vapor Deposition process with Si and Te as source materials. Morphology, structure, and optical and electrical properties of the nanostructures were investigated by electron microscopy, x-ray spectroscopy, temperature dependent photoluminescence, and electrical transport measurements. Band gap emission of Si₂Te₃ was observed only at low temperatures while strong defect emission bands were present at room temperature. Electrical measurements of the nanowires showed memristive switching at room temperature, which may have potential applications in memory devices. The mechanism of the memristive switching behavior was further investigated by theoretical calculations.