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Understanding how electricity moves through material impacts technology from power transmission to the advanced functionality of a nanometer scale transistor. A full understanding of the fundamental process is only understood in subclass of materials where the electron motion is effectively non-correlated—ie the state of a single does not depend on the neighboring electrons. Here I present a study aimed to understand the electronic properties of a material that is not so simple. The material in question for this study is strontium vanadate (), a transparent conductor grown via hybrid molecular beam epitaxy (hMBE). Transport measurements for have been shown to differ from what is expected from density functional theory (DFT) calculations, which is the only means by which these materials can be studied from a theoretical standpoint. We use Ong’s method to try and connect the calculated DFT values and the transport measurement data for [1]. We utilize Ong’s method by the looking at the geometry of a fermi surface (FS) to determine its correlation effects. We did find that the Ong method fails in the high temperature regime due to strong electron correlations.