1D InAs channels by selective area growth for topological superconductivity applications*

Topological superconductivity has been realized using one-dimensional (1D) semiconductor nanowire-based systems. An important step towards topological quantum computation applications is to demonstrate complex nanostructures consisting of multiple 1D channels hosting the topological superconducting phases. Here, we demonstrate 1D in-plane InAs channels by selective-area growth on SiO₂-patterned InP substrates using chemical beam epitaxy and molecular beam epitaxy. This bottom-up approach of selective-area growth is promising for realizing the scalable networks of 1D semiconductor channels. We investigated the optimal growth conditions of epitaxial InAs on InP by varying V/III ratio, substrate temperature, and growth rate. The resulting surface morphology and the facet formation of InAs crystals also depend on the crystallographic orientation and dimensions of 1D channel. In addition to the growth studies, we also discuss the electronic transport properties of the selectively grown InAs channels in various growth conditions, orientations, and dimensions.