Bulletin of the American Physical Society
APS March Meeting 2018
Volume 63, Number 1
Monday–Friday, March 5–9, 2018; Los Angeles, California
Session R11: Dopants and Defects in Semiconductors - Quantum Information
8:00 AM–11:00 AM,
Thursday, March 8, 2018
LACC Room: 303A
Sponsoring Units: DMP DQI DCOMP FIAP
Chair: Gregory Fuchs, Cornell Univ
Abstract ID: BAPS.2018.MAR.R11.13
Abstract: R11.00013 : Defects in silicon – old story or new horizons ?*
10:48 AM–11:00 AM
(Walter Schottky Institut, Technische Universität München)
However, in modern implementations of quantum devices coherence times can still suffer from or be limited by the properties of the materials, e.g. defects at interfaces or the coherence properties of the atomic qubits themselves.
We present the investigation of the coherence and relaxation times of various defects in silicon such as the Pb centers at the Si/SiO2 interface as well as phosphorus donors. We employ pulsed electron spin resonance techniques using superconducting niobium lumped element microwave resonators in the temperature regime below 0.5 K, the relevant temperature regime for QIP. We will highlight the challenges and benefits of using superconducting planar structures for electron spin resonance. Typical coherence times for the systems studied are of the order of a few milliseconds. The relaxation times observed are in the seconds range and are likely limited by the coupling to the microwave circuit.
*We acknowledge funding via the DFG priority program SPP1601.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2018.MAR.R11.13
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