Bulletin of the American Physical Society
APS March Meeting 2018
Volume 63, Number 1
Monday–Friday, March 5–9, 2018; Los Angeles, California
Session R11: Dopants and Defects in Semiconductors - Quantum Information
8:00 AM–11:00 AM,
Thursday, March 8, 2018
LACC
Room: 303A
Sponsoring
Units:
DMP DQI DCOMP FIAP
Chair: Gregory Fuchs, Cornell Univ
Abstract ID: BAPS.2018.MAR.R11.1
Abstract: R11.00001 : New color centers in diamond for long distance quantum networks*
8:00 AM–8:36 AM
Presenter:
Nathalie De Leon
(Electrical Engineering, Princeton University)
Author:
Nathalie De Leon
(Electrical Engineering, Princeton University)
Informed by the limitations of NV- and SiV-, we have developed new methods to control the diamond Fermi level to stabilize the neutral charge state of SiV, thus accessing a new spin configuration. SiV0 exhibits a spin T1 of around 1 minute at 4 K, coherence time (T2) approaching 1 second, over 90% of emission in the zero phonon line, and near-transform limited optical linewidths, making it a promising candidate for applications in quantum networks.
[1] B. C. Rose, D. Huang, Z. Zhang, A.M. Tyryshkin, S. Sangtawesin, S. Srinivasan, L. Loudin, M. L. Markham, A. M. Edmonds, D. J. Twitchen, S. A. Lyon, and N. P. de Leon, “Observation of an environmentally insensitive solid state spin defect in diamond,” arXiv:1706.01555 [cond-mat.mtrl-sci] (2017)
[2] B. C. Rose, G. Thiering, A.M. Tyryshkin, A. M. Edmonds, M. L. Markham, A. Gali, S. A. Lyon, and N. P. de Leon, “Strongly Anisotropic Spin Relaxation in the Neutral Silicon Vacancy Center in Diamond,” arXiv:1710.03196 [quant-ph] (2017)
*This work was supported by the National Science Foundation under the EFRI ACQUIRE program (grant No. 1640959), the Princeton Center for Complex Materials, a Materials Research Science and Engineering Center (DMR-1420541), and by the Air Force Office of Scientific Research (FA9550-17-0158).
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2018.MAR.R11.1
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