Wednesday, March 7, 2018
11:15AM - 11:51AM
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L11.00001: Doping and interfaces in complex oxide heterostructures and superlattices from first principles
Invited Speaker:
Karin Rabe
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Wednesday, March 7, 2018
11:51AM - 12:03PM
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L11.00002: The effects of excess electrons in BiVO4
Iflah Laraib, Marciano Carneiro, Anderson Janotti
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Wednesday, March 7, 2018
12:03PM - 12:15PM
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L11.00003: Local structure about Er and Hf defects in LiNbO3: possibility of meta-stable distributions
Frank Bridges, Cameron MacKeen, Laszlo Kovacs
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Wednesday, March 7, 2018
12:15PM - 12:27PM
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L11.00004: Boosting Small Polaron Hopping Mobility of Bismuth Vanadate by Doping from First-Principles Calculations
Feng Wu, Wenrui Zhang, Mingzhao Liu, Yuan Ping
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Wednesday, March 7, 2018
12:27PM - 12:39PM
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L11.00005: Ab initio study of polaron dynamics in transition metal oxides
Taewon Min, Jaekwang Lee
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Wednesday, March 7, 2018
12:39PM - 12:51PM
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L11.00006: Reduced Spin-Phonon Coupling and Increased Hole Mobility of CuO by Li doping from First-principles Calculations
Tyler Smart, Allison Cardiel, Kyoung-Shin Choi, Yuan Ping
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Wednesday, March 7, 2018
12:51PM - 1:03PM
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L11.00007: Charge Localization Near Acceptors in Transition-Metal Oxides
Fernando Sabino, Anderson Janotti
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Wednesday, March 7, 2018
1:03PM - 1:15PM
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L11.00008: Ab initio study on the effectiveness of Mg-doping on improving conductivity in the transparent conducting oxides CuAlO2, AgAlO2, and CuCrO2
James Shook, Pablo Borges, Luisa Scolfaro
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Wednesday, March 7, 2018
1:15PM - 1:27PM
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L11.00009: Improvements on the Diamond-V2O5 2DHG Electronic Structure using an Al2O3 Passivation Layer
Yichen Yao, Yu Yang, Xingye Wang, Franz Koeck, Robert Nemanich
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Wednesday, March 7, 2018
1:27PM - 1:39PM
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L11.00010: Investigation of 3C-SiC/SiO2 Interfacial Point Defects from First Principles Calculations and Electron Paramagnetic Resonance Measurements
Taufik Adi Nugraha, Martin Rohrmüller, Uwe Gerstmann, Siegmund Greulich-Weber, Jean-Louis Cantin, Jurgen von Bardeleben, Wolfgang Schmidt, Stefan Wippermann
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Wednesday, March 7, 2018
1:39PM - 1:51PM
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L11.00011: Analytical Electron Microscopy of Antimony Doped 4H-SiC/SiO2 and 4H-SiC/Boron and Phosphorus Doped SiO2 Interface Structures in MOS Devices
Christopher Klingshirn, Joshua Taillon, Gang Liu, Sarit Dhar, Leonard Feldman, Tsvetanka Zheleva, Aivars Lelis, Lourdes Salamanca-Riba
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Wednesday, March 7, 2018
1:51PM - 2:03PM
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L11.00012: Optically-pumped 75As NMR Reveals an Electric Field Gradient at an Al2O3-GaAs Interface and Very Low Nuclear Spin Temperatures
Sophia Hayes, Matthew Willmering, Michael West
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