Lateral band bending and defects in WS<sub>2</sub> flakes

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APS March Meeting 2018

Volume 63, Number 1

Monday–Friday, March 5–9, 2018; Los Angeles, California

Session K36: 2D Materials -Role of Defects

8:00 AM–11:00 AM, Wednesday, March 7, 2018
LACC Room: 410

Sponsoring Unit: DMP
Chair: Kathleen McCreary, U.S. Naval Research Laboratory

Abstract ID: BAPS.2018.MAR.K36.1

Abstract: K36.00001 : Lateral band bending and defects in WS₂ flakes*

8:00 AM–8:12 AM

Abstract

Presenter:

Roland Koch
(Advanced Light Source, Lawrence Berkeley National Laboratory)

Authors:

Roland Koch
(Advanced Light Source, Lawrence Berkeley National Laboratory)

Christoph Kastl
(Molecular Foundry, Lawrence Berkeley National Laboratory)

Søren Ulstrup
(Aarhus University)

Jyoti Katoch
(Department of Physics, Ohio State University)

Simon Moser
(Advanced Light Source, Lawrence Berkeley National Laboratory)

Christopher Chen
(Molecular Foundry, Lawrence Berkeley National Laboratory)

Tevye Kuykendall
(Molecular Foundry, Lawrence Berkeley National Laboratory)

Adam Schwartzberg
(Molecular Foundry, Lawrence Berkeley National Laboratory)

Shaul Aloni
(Molecular Foundry, Lawrence Berkeley National Laboratory)

Alexander Weber-Bargioni
(Molecular Foundry, Lawrence Berkeley National Laboratory)

Eli Rotenberg
(Advanced Light Source, Lawrence Berkeley National Laboratory)

Chris Jozwiak
(Advanced Light Source, Lawrence Berkeley National Laboratory)

Aaron Bostwick
(Advanced Light Source, Lawrence Berkeley National Laboratory)

The properties of transition metal dichalcogenides are strongly influenced by changes of the electronic structure. Angular resolved photoemission spectroscopy (ARPES) is the ideal tool for obtaining precise information about the electronic state. At the nano-ARPES facility of the MAESTRO beamline at the Advanced Light Source, we combine ARPES with spatial resolution by focusing the illuminating photon beam down to a spot of 100 nm diameter. Nano-ARPES allows us to laterally map differences in band bending and changes in the spectral function of WS₂ and hexagonal BN on different substrates. By combining the angular resolved data with laterally resolved core level spectroscopy, we pinpoint the observed changes to edges and/or defects in the materials.

*This research used resources of the Advanced Light Source, which is a DOE Office of Science User Facility under contract no. DE-AC02-05CH11231. Work at the Molecular Foundry was supported by the Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC0

To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2018.MAR.K36.1

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Bulletin of the American Physical Society

APS March Meeting 2018

Volume 63, Number 1

Monday–Friday, March 5–9, 2018; Los Angeles, California

Session K36: 2D Materials -Role of Defects

Abstract: K36.00001 : Lateral band bending and defects in WS2 flakes*

Presenter:

Authors:

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Abstract: K36.00001 : Lateral band bending and defects in WS₂ flakes*