Defects in N-Rich, Si-Rich, and Stoichiometric Silicon Nitride Thin Films Observed Using Electrically Detected Magnetic Resonance and Near-Zero Field Magnetoresistance*

We utilize near-zero field magnetoresistance (MR) and electrically detected magnetic resonance (EDMR) to investigate electronic transport in thin films of N-rich, Si-rich, and stoichiometric silicon nitride films. We compare EDMR and MR detected through spin dependent trap assisted tunneling (SDTAT) over a range of biasing conditions. The EDMR measurements were made at several very different field/frequency combinations, exploiting the near field and frequency independence of the EDMR response. The multiple field/frequency comparisons allow us to some extent to separate spin orbit coupling and hyperfine interaction contributions to the spectra. The multiple frequency EDMR results also provide insight with regard to the near-zero field MR response. Additionally, the MR and EDMR response as a function of bias provides (relatively crude) insight into the energy levels of the defect centers.