two-dimensional electron system*

In a current carrying metallic system, temperature of the carriers depends on Joule heating and energy relaxation through electron diffusion or electron-phonon coupling [01, 02, 03]. In this study, carrier heating induced by ac bias current in high mobility GaAs/Al_xGaAs_1-x two-dimensional electron system at temperature range of 1.6 ≤ T ≤ 4.2 K was investigated using alteration in the line shape of Shubnikov de Haas oscillations. Haas oscillation was analyzed, and fit base on Lifshitz-Kosevich theory and extracted carrier temperatures indicate that the electron diffusion predominant in the energy relaxation process of the system and the 2DES is in a quasi-equilibrium state where the hot electron situation is attained.

[01] Zhenbing Tan, Changling Tan, Li Ma, G. T. Liu, L. Lu, and C. L. Yang, Phys. Rev. B 84, 115429 (2011).
[02] X. L. Lei, and S. Y. Liu, Phys. Rev. B 72, 075345 (2005).
[03] J. K. Viljas, and T. T. Heikkilä, Phys. Rev. B 81, 245404 (2010).