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Antiferromagnetic (AFM) materials are expected to improve stability, scalability, and speed of magnetic memory applications thanks to the insensitivity of AFMs to magnetic fields and their high natural frequencies. Of particular interest are AFM transition metal oxides (TMO) as their properties can be tuned using various external stimuli, thus opening an entirely new dimension to the field of spintronics. We have previously demonstrated that the transport properties of AFM TMOs can be tuned by an externally applied electric field [1] – a reversible resistive switching induced by an electric bias was found in Sr₃Ir₂O₇ and tentatively attributed to electric-field driven lattice distortions/structural transition. In this work, we probe the energy barrier associated with this transition using time-resolved measurements of the switching. We observed an exponential dependence of the switching probability on both applied bias and temperature consistent with thermal activation over an energy barrier. [1] C. Wang et al. Phys. Rev. B 92, 115136 (2015); H. Seinige et al. ibid 94, 214434 (2016)