Atomic-resolution STM/STS study of Bi atoms implanted in Si(001)*

The quantum states formed by atomic point defects and dopant atoms in semiconductors are of renewed current interest because these systems hold the potential to become the active components of nanoscale electronic devices. Scanning tunnelling microscopy and spectroscopy (STM/STS) provide the unique ability to resolve in real-space, and as a function of energy, the quantum states of individual defects and dopants in semiconductors. In this talk we will present a low temperature STM/STS investigation of Si(001) samples implanted with Bi atoms. We observe a new defect state that we associate with the implanted Bi atoms and we will present a discussion of the properties of these features.