Transport Properties of Thin Film α-Sn*

The Army Research Lab is growing α-Sn via molecular beam epitaxy and investigating its topological nature for use in mesoscopic devices. The reported observation of nontrivial topology in α-Sn indicates its candidacy for transport studies in which the protected edge state plays a vital role. By measuring the magnetoresistance and temperature-dependent conductance of fabricated transport devices like hall bars, we characterize the electronic topology and band structure properties of α-Sn. Such transport experiments are necessary to evaluate the potential for highly efficient quantum and spintronic devices using α-Sn.