Designing for strain in silicon quantum dot devices*

Mechanical strain, established as a result of thermal expansion mismatch during cooling to cryogenic temperatures and the steps of device fabrication, may significantly alter the potential landscape experienced by electrons in electrostatically-defined silicon quantum dot devices. Through simulating the established strain field and incorporating the combined effects of electrostatics and strain on electronic structure, we can quantitatively model device performance. In this talk, we explore the role mechanical strain may play in device operation and propose methods through which one may mitigate deleterious strain effects and, conversely, exploit strain to design a built-in potential landscape.