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In this talk, I will report the fabrication and properties of novel 2D materials like semiconducting transition-metal-dichalcogenide monolayer PtSe₂ [1] and its in-plane 1T/1H heterostructure with atom-shape interface [2], as well as superconductor transition-metal-trichalcogenide (HfTe₃)[3], grown by direct selenization/tellurization of the Pt/Hf substrate. Their application exploring in nanoelectronics and valleytronics will also be introduced. In addition, the stacking heterolayers based on several these kinds of 2D materials, for instance, a superconductor-topological insulator layered heterostructure (with an HfTe₃/HfTe₅ layered configuration) for Majorana bound states will be briefly presented [4,5]. We expect that these materials will show intriguing physical property and promising potential applications in nanoscale devices.
References
(1) Yeliang Wang, et al., Nano Lett. 15, 4013 (2015).
(2) X.Lin, et al., Nat. Mater. 16, 717 (2017).
(3) Y.Q. Wang et al., Adv. Electron. Mater. 2, 1600324 (2016).
(4) Y.Q. Wang et al., Adv. Mater. 28,5013 (2016).
(5) Xu Wu, et al., Adv. Mater. 29,1605407 (2017).