Voltage Controlled Multi-bit Memory and Logic Operation in Manganite Nanostrips

Combining memory and logic functionality in one single device unit is highly attractive in developing next-generation nonvolatile devices. Manganites have been known to respond sensitively to electric field. Using this effect, we fabricate manganite strips with N pairs of side gates to control the total resistivity by side gate voltage. We demonstrate that the total resistivity of the manganite strips can have the 2^N different levels by various gate voltage combinations. Logic operations can also be performed in such devices, which are promising for future computing systems beyond von Neumann architecture.