High-Impedance Titanium Nitride Resonators via Atomic Layer Deposition

High-impedance resonators provide the opportunity to achieve ultra-strong coupling in superconducting qubits, strong coupling in hybrid systems, and highly compact multi-modal systems. The use of materials with a large kinetic inductance, like titanium nitride (TiN), allow one to realize high-impedance resonators using thin films. Atomic Layer Deposition (ALD) allows for atomic precision in film thickness on a wafer scale, a necessity for precise device fabrication in thin films. Here we present results of using ALD of TiN to realize thin films (thicknesses ∼ 8 nm) and high-impedance resonators (Z_char ≥ 1kΩ). We will discuss quality factor measurements and other applications of these highly inductive TiN thin films.