Bulletin of the American Physical Society
APS March Meeting 2018
Volume 63, Number 1
Monday–Friday, March 5–9, 2018; Los Angeles, California
Session X30: Superconducting Devices & Applications
8:00 AM–10:48 AM,
Friday, March 9, 2018
LACC
Room: 406B
Sponsoring
Units:
DCMP DMP
Abstract ID: BAPS.2018.MAR.X30.8
Abstract: X30.00008 : Gating the superconducting transition in gallium doped silicon*
9:24 AM–9:36 AM
Abstract 
Presenter:
Brandur Thorgrimsson
(Physics, University of Wisconsin-Madison)
Authors:
Brandur Thorgrimsson
(Physics, University of Wisconsin-Madison)
Evan MacQuarrie
(Physics, University of Wisconsin-Madison)
Nathan Holman
(Physics, University of Wisconsin-Madison)
J. P. Dodson
(Physics, University of Wisconsin-Madison)
Tom McJunkin
(Physics, University of Wisconsin-Madison)
Ryan Foote
(Physics, University of Wisconsin-Madison)
Robert McDermott
(Physics, University of Wisconsin-Madison)
Mark Friesen
(Physics, University of Wisconsin-Madison)
Maxim Vavilov
(Physics, University of Wisconsin-Madison)
Alex Levchenko
(Physics, University of Wisconsin-Madison)
Susan Coppersmith
(Physics, University of Wisconsin-Madison)
M. A. Eriksson
(Physics, University of Wisconsin-Madison)
We report on the effects different gate voltages have on the superconducting transition. As in traditional MOS devices, the gate should modulate the carrier density in the now superconducting silicon channel, and it has been reported [2] that the presence of this superconducting transition is indeed related to carrier density in the superconducting channel.
[1] R. Skrotzki et. al., Appl. Phys. Lett. 97, 192505 (2010).
[2] V. Heera, et. al., Appl. Phys. Lett. 100, 262602 (2012).
*This work was supported in part by NSF EAGER Grant No. DMR-1743986. We acknowledge the use of facilities supported by NSF through the UW-Madison MRSEC (DMR-1720415).
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2018.MAR.X30.8
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