Transport Properties of CVD Graphene Cooled with a Biased Gate Voltage*

Electron and hole transport in graphene continues to be a topic of theoretical and experimental interest[1-2]. In this experimental work, we examine electron/hole transport in a graphene Hall bar device, where the graphene was prepared using standard chemical vapor deposition on copper foils. This study aims to find the effect of cooling a graphene specimen under a gate bias on the transport characteristics. Thus, we present results from the measurements carried out in a closed cycle refrigerator out over a broad temperature range (295K – 15K), with a focus on the effect of the gate bias voltage on the charge neutrality point. Further we study the behavior of the Hall effect under different gate voltages around the charge neutrality point.

[1]. Y.-W. Tan, Y. Zhang, H.L. Stormer, and P.Kim, Eur. Phys. J. Special Topics 148 15-18 (2007)
[2]. R.G. Mani, Appl. Phys. Lett. 108, 033507 (2016)