Bulletin of the American Physical Society
APS March Meeting 2018
Volume 63, Number 1
Monday–Friday, March 5–9, 2018; Los Angeles, California
Session S38: Materials in Extremes: Synthesis of Novel Materials
11:15 AM–2:15 PM,
Thursday, March 8, 2018
LACC
Room: 501A
Sponsoring
Units:
DCOMP GSCCM DMP
Chair: Romain Perriot, Los Alamos National Laboratory
Abstract ID: BAPS.2018.MAR.S38.8
Abstract: S38.00008 : Synthesis and characterization of molecularly doped nanodiamond at high pressure and high temperature conditions*
12:39 PM–12:51 PM
Presenter:
Peter Pauzauskie
(Materials Science & Engineering, University of Washington)
Authors:
Matthew Crane
(Chemical Engineering, University of Washington)
Abbie Ganas
(Chemistry, University of Washington)
Rhonda Stroud
(Materials Science and Technology Division, Naval Research Laboratory)
E. James Davis
(Chemical Engineering, University of Washington)
Peter Pauzauskie
(Materials Science & Engineering, University of Washington)
Here, we present a new bottom-up method to create doped nanodiamond via molecular dopant molecules added into an amorphous, hydrocarbon matrix. At high pressure, high temperature conditions in a laser heated diamond anvil cell, the amorphous carbon doped with silicon and nitrogen molecules converts to doped nanocrystalline diamond containing silicon and nitrogen defects. At elevated pressures, photoluminescence, lifetime, and Raman measurements monitor the incorporation of dopants and formation of diamond. Electron energy loss and energy dispersive X-ray spectroscopies of the recovered samples further demonstrate nanocrystalline diamond formation and molecular doping. Photothermal heating models elucidate the critical role of the pressure media during diamond formation.
*We acknowldge a CAREER Award from the NSF (#1555007), starting funding from the University of Washington, an NDSEG (DOD), a Joseph Goldstein Award (Microanalysis Society), and an LDRD (PNNL & MS3).
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2018.MAR.S38.8
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