devices

Among two dimensional materials is the class of transition metal dichalcogenides (TMDs) which, in their single layer form, are found to be direct bandgap semiconductors, making them ideal of optoelectronic devices. While several groups have successfully demonstrated single photon emission from exfoliated monolayers, few layer boundaries, and defect boundaries in WSe₂, there have been only a few reports in materials produced using CVD techniques. Our group has recently demonstrated success in growing naturally contacted TMDs such as MoS₂ and WS₂ using chemical vapor deposition (CVD) with finely tuned parameters to develop complex device structures. We are currently working to develop WSe₂ devices by growing on predetermined structures that could potentially generate electrically driven single photons on demand. We will present our work to date on the development of WSe₂ using both CVD and exfoliation techniques to create monolayers that exhibit single photon emission properties. Our ultimate goal is to employ techniques, such as a Hanburry-Brown and Twiss setup, to study these structures and their quantum emission properties.