Bulletin of the American Physical Society
APS March Meeting 2017
Volume 62, Number 4
Monday–Friday, March 13–17, 2017; New Orleans, Louisiana
Session S42: Spins and Defects in Si and SiC
11:15 AM–2:27 PM,
Thursday, March 16, 2017
Room: 389
Sponsoring
Unit:
GQI
Chair: Pratibha Dev, Howard University
Abstract ID: BAPS.2017.MAR.S42.10
Abstract: S42.00010 : Optimizing silicon locking layer overgrowth for high-quality phosphorus-doped delta layers*
1:51 PM–2:03 PM
Preview Abstract
Abstract
Authors:
Xiqiao Wang
(Univ of Maryland-College Park)
Joseph Hagmann
(National Institute of Standards and Technology)
Pradeep Namboodiri
(National Institute of Standards and Technology)
Jonathan Wyrick
(National Institute of Standards and Technology)
Kai Li
(National Institute of Standards and Technology)
Roy Murray
(National Institute of Standards and Technology)
M.D. Stewart, Jr
(National Institute of Standards and Technology)
Curt Richter
(National Institute of Standards and Technology)
Richard Silver
(National Institute of Standards and Technology)
*Innovations in Measurement Science (IMS) project at NIST: Single atom transistors to solid states quantum computing.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2017.MAR.S42.10
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