Bulletin of the American Physical Society
APS March Meeting 2017
Volume 62, Number 4
Monday–Friday, March 13–17, 2017; New Orleans, Louisiana
Session P7: First-Principles Modeling of Excited State Phenomena VI: Semiconductors and Oxides
2:30 PM–5:30 PM,
Wednesday, March 15, 2017
Room: 266
Sponsoring
Units:
DCOMP DMP DCP
Chair: Emmanouil Kioupakis, University of Michigan
Abstract ID: BAPS.2017.MAR.P7.4
Abstract: P7.00004 : Carrier-Induced Transient Defect Formation and Nonradiative Recombination in InGaN Light-Emitting Devices: A First-Principles Study*
3:30 PM–3:42 PM
Preview Abstract Abstract
Authors:
Junhyeok Bang
(Korea Basic Science Institute)
Yiyang Sun
(Rensselaer Polytechnic Institute)
J.-H. Song
(Kongju National University)
S. B. Zhang
(Rensselaer Polytechnic Institute)
*This work was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (NRF-2015R1C1A1A02037024).
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2017.MAR.P7.4
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