Structural Characterization of Stanene Grown on Bi$_2$Te$_3$ by Anomalous X-Ray Scattering

Two-dimensional topological insulators are promising materials for use in spintronics and the realization of dissipation-free conduction. Stanene, a hexagonal monolayer of Sn, is a promising candidate for these applications because it supports one-dimensional edge states and is predicted to have a large enough bandgap ($>0.1$ eV) for devices to operate at elevated temperature. Here we report the growth of stanene on Bi$_2$Te$_3$ using molecular beam epitaxy. By growing stanene \textit{in situ} at a synchrotron light source, we measure energy dependent scattering along Bi$_2$Te$_3$ crystal truncation rods (CTRs). The scattered intensity along Bi$_2$Te$_3$ CTRs undergoes a strong modulation as the incident x-ray energy is tuned across the Sn K-edge, indicating coherent growth of the stanene to the Bi$_2$Te$_3$ substrate. Analysis of these measurements reveals the particular polymorph of stanene on Bi$_2$Te$_3$.