Bulletin of the American Physical Society
APS March Meeting 2017
Volume 62, Number 4
Monday–Friday, March 13–17, 2017; New Orleans, Louisiana
Session F28: Dopants and Defects in Semiconductors IV: Nitrides
11:15 AM–2:03 PM,
Tuesday, March 14, 2017
Room: 291
Sponsoring
Units:
DMP FIAP DCOMP
Chair: Nicholas Harmon, University of Iowa
Abstract ID: BAPS.2017.MAR.F28.7
Abstract: F28.00007 : Schrodinger-Poisson Modeling of Al$_{\mathrm{x}}$Ga$_{\mathrm{1-x}}$N/GaN Heterostructures Employing Tailored Depth-Dependent Aluminum Concentration for Polarization Grading*
12:51 PM–1:03 PM
Preview Abstract
Abstract
Authors:
Jeffrey Calame
(Naval Research Laboratory)
Igor Chernyavskiy
(Naval Research Laboratory)
Mario Ancona
(Naval Research Laboratory)
David Meyer
(Naval Research Laboratory)
*Work supported by the U.S. Office of Naval Research
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2017.MAR.F28.7
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