Bulletin of the American Physical Society
APS March Meeting 2017
Volume 62, Number 4
Monday–Friday, March 13–17, 2017; New Orleans, Louisiana
Session F28: Dopants and Defects in Semiconductors IV: Nitrides
11:15 AM–2:03 PM,
Tuesday, March 14, 2017
Room: 291
Sponsoring
Units:
DMP FIAP DCOMP
Chair: Nicholas Harmon, University of Iowa
Abstract ID: BAPS.2017.MAR.F28.4
Abstract: F28.00004 : Charge Transfer in Compensated GaN:Be Substrates Observed with Magnetic Resonance*
12:15 PM–12:27 PM
Preview Abstract
Abstract
Authors:
William Willoughby
(University of Alabama at Birmingham)
Mary Ellen Zvanut
(University of Alabama at Birmingham)
Jamiyanaa Dashdorj
(University of Alabama at Birmingham)
Michal Bockowski
(Institute of High Pressure Physics, Warsaw, Poland)
*Supported by NSF 1308446
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2017.MAR.F28.4
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