Bulletin of the American Physical Society
APS March Meeting 2017
Volume 62, Number 4
Monday–Friday, March 13–17, 2017; New Orleans, Louisiana
Session F28: Dopants and Defects in Semiconductors IV: Nitrides
11:15 AM–2:03 PM,
Tuesday, March 14, 2017
Room: 291
Sponsoring
Units:
DMP FIAP DCOMP
Chair: Nicholas Harmon, University of Iowa
Abstract ID: BAPS.2017.MAR.F28.2
Abstract: F28.00002 : Effects of Sc-doping on the structure and physical properties of AlN: first-principles studies*
11:51 AM–12:03 PM
Preview Abstract Abstract
Authors:
Chengxin Wang
(Chengdu Green Energy and Green Manufacturing Technology R&D Center)
Zhifan Wang
(Chengdu Green Energy and Green Manufacturing Technology R&D Center)
Yanning Zhang
(University of Electronic Science and Technology of China)
Collaborations:
Chengdu Green Energy and Green Manufacturing Technology R&D Center, University of Electronic Science and Technology of China
*National Natural Science Foundation of China (Grants No. 61574131) and China Postdoctoral Science Foundation (Grants No. 2016M592703)
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2017.MAR.F28.2
Follow Us |
Engage
Become an APS Member |
My APS
Renew Membership |
Information for |
About APSThe American Physical Society (APS) is a non-profit membership organization working to advance the knowledge of physics. |
© 2024 American Physical Society
| All rights reserved | Terms of Use
| Contact Us
Headquarters
1 Physics Ellipse, College Park, MD 20740-3844
(301) 209-3200
Editorial Office
100 Motor Pkwy, Suite 110, Hauppauge, NY 11788
(631) 591-4000
Office of Public Affairs
529 14th St NW, Suite 1050, Washington, D.C. 20045-2001
(202) 662-8700