APS March Meeting 2017
Volume 62, Number 4
Monday–Friday, March 13–17, 2017;
New Orleans, Louisiana
Session F24: Graphene Spintronics
11:15 AM–2:15 PM,
Tuesday, March 14, 2017
Room: New Orleans Theater C
Sponsoring
Unit:
GMAG
Chair: Roland Kawakami, Ohio State University
Abstract ID: BAPS.2017.MAR.F24.3
Abstract: F24.00003 : A two-dimensional spin field-effect switch
12:27 PM–1:03 PM
Preview Abstract
Abstract
Author:
Felix Casanova
(CIC nanoGUNE, San Sebastian, Basque Country (Spain))
The integration of the spin degree of freedom in charge-based electronic
devices has revolutionised both sensing and memory capability in
microelectronics. Further development in spintronic devices requires
electrical manipulation of spin current for logic operations. The mainstream
approach followed so far, inspired by the seminal proposal of the Datta and
Das spin modulator [1], has relied on the spin-orbit field as a medium for
electrical control of the spin state [2-4]. However, the still standing
challenge is to find a material whose spin-orbit coupling (SOC) is weak
enough to transport spins over long distances, while also being strong
enough to allow their electrical manipulation. In our recent work [5], we
demonstrate a radically different approach by engineering a van der Waals
heterostructure from atomically thin crystals [6], and which combines the
superior spin transport properties of graphene with the strong SOC of
MoS$_{\mathrm{2}}$, a transition metal dichalcogenide with semiconducting
properties. The spin transport in the graphene channel is modulated between
ON and OFF states by tuning the spin absorption into the MoS$_{\mathrm{2}}$
layer with a gate electrode [5]. Our demonstration of a spin field-effect
switch using two-dimensional (2D) materials identifies a new route towards
spin logic operations for beyond CMOS technology. Furthermore, the van der
Waals heterostructure at the core of our experiments opens the path for
fundamental research of exotic transport properties predicted for transition
metal dichalcogenides [7], in which electrical spin injection has so far
been elusive.
[1] S. Datta and B. Das, Appl. Phys. Lett. 56, 665 (1990).
[2] H.C. Koo et al., Science 325, 1515 (2009).
[3] J. Wunderlich et al., Science 330, 1801 (2010).
[4] P. Chuang et al., Nat. Nanotechnol. 10, 35 (2015).
[5] W. Yan et al., Nat. Commun. 7, 13372 (2016).
[6] A. K. Geim and I. V. Grigorieva, Nature 449, 419 (2013).
[7] Y. Song and H. Dery, Phys. Rev. Lett. 111, 026601 (2013).
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2017.MAR.F24.3