Gate-controllable magneto-optic Kerr effect in layered collinear antiferromagnets*

Using symmetry arguments and a tight-binding model, we show that for layered collinear antiferromagnets, magneto-optic effects can be generated and manipulated by controlling crystal symmetries through a gate voltage. This provides a promising route for electric field manipulation of the magneto-optic effects without modifying the underlying magnetic structure. We further demonstrate the gate control of magneto-optic Kerr effect (MOKE) in bilayer MnPSe$_3$ using first-principles calculations. The field-induced inversion symmetry breaking effect leads to gate-controllable MOKE whose direction of rotation can be switched by the reversal of the gate voltage.