Perpendicularly magnetized Mn-based binary films compatible with semiconductor in structure and technique*

Ferromagnetic films with both high perpendicular anisotropy and good compatibility with semiconductors have great potential not only in semiconductor spintronic devices, but also in high-density integration of metallic spintronic functional devices like nonvolatile MRAM on semiconductor circuits [1]. Recently, we have grown the high-quality $L$1$_{\mathrm{0}}$-MnGa and $L$1$_{\mathrm{0}}$-MnAl films on GaAs by MBE, which show giant perpendicular magnetic anisotropy [2-5]. Moreover, annealing studies revealed the thermal stability of \quad them up to at least 350C, indicating its compatible with current semiconductor industry technique [3]. Here, we will present the orbital two-channel Kondo (2CK) effect observed in ferromagnetic $L$1$_{\mathrm{0}}$-MnAl and $L$1$_{\mathrm{0}}$-MnGa, which provide the first evidence for the presence of 2CK effect in a ferromagnet [6-8]. The tunneling magnetic resistivity of $L$1$_{\mathrm{0}}$-MnGa-based perpendicularly magnetic tunnel junctions will also be mentioned. \textbf{References: }[1]~\textit{Appl. Phys.} A 111 (2013) 379; [2] \textit{Adv. Mater. }24 (2012) 4547; [3]~\textit{Appl. Phys. Lett.} 102 (2013) 132403; [4] \textit{Appl. Phys. Lett.} 102 (2013) 152405; [5] \textit{Phys. Rev.} B 89 (2014) 220406(R); [6] \textit{Nature Commun}. 7 (2016) 10817; [7] \textit{Phys. Rev. }B 93 (2016) 195112; [8] \textit{Sci. Rep.} 6 (2016) 34549