APS March Meeting 2017
Volume 62, Number 4
Monday–Friday, March 13–17, 2017;
New Orleans, Louisiana
Session B33: Valley and Spin Dependent Properties
11:15 AM–2:15 PM,
Monday, March 13, 2017
Room: 296
Sponsoring
Unit:
DMP
Chair: Keun-Su Kim, POSTECH
Abstract ID: BAPS.2017.MAR.B33.1
Abstract: B33.00001 : Optical manipulation of valley pseduospin in 2D semiconductors
11:15 AM–11:51 AM
Preview Abstract
Abstract
Author:
Ziliang Ye
(Stanford University)
Valley polarization associated with the occupancy in the energy degenerate
but quantum mechanically distinct valleys in the momentum space closely
resembles spin polarization and has been proposed as a pseudospin carrier
for future quantum information technologies. Monolayers of transition metal
dichalcogenide (TMDC) crystals, with broken inversion symmetry and large
spin-orbital coupling, support robust valley polarization and therefore
provide an important platform for studying valley-dependent physics.(1)
Besides optical excitation and photoluminescence detection, valley
polarization has been electrically measured through the valley Hall
effect(2) and created through spin injection from ferromagnetic
semiconductor contacts.(3) Moreover, the energy degeneracy of the valley
degree of freedom has been lifted by the optical Stark effect.(4, 5)
Recently, we have demonstrated optical manipulation of valley coherence,
i.e., of the valley pseudospin, by the optical Stark effect in monolayer
WSe$_{\mathrm{2}}$.(6) Using below-bandgap circularly polarized light, we
rotated the valley pseudospin on the femtosecond time scale. Both the
direction and speed of the rotation can be optically controlled by tuning
the dynamic phase of excitons in opposite valleys. The pseudospin rotation
was identified by changes in the polarization of the photoluminescence. In
addition, by varying the time delay between the excitation and control
pulses, we directly probed the lifetime of the intervalley coherence.
Similar rotation levels have also been observed in static magneto-optic
experiments.(7, 8) Our work presents an important step towards the full
control of the valley degree of freedom in 2D semiconductors. The work was
done in collaboration with Dr. Dezheng Sun and Prof. Tony F. Heinz.\newline
(1) X. Xu et al. Nature physics \textbf{10}, 343 (2014). \newline
(2) K. F. Mak et al. Science \textbf{344}, 1489 (2014). \newline
(3) Y. Ye et al. Nature Nanotechnology \textbf{11}, 598 (2016). \newline
(4) J. Kim et al. Science \textbf{346}, 1205 (2014). \newline
(5) E. J. Sie et al. Nature Materials \textbf{14}, 290 (2014). \newline
(6) Z. Ye et al. Nature physics, in press (2016). DOI:10.1038/nphys3891
\newline
(7) R. Schmidt et al. Phys. Rev. Lett. \textbf{117}, 077402 (2016). \newline
(8) G. Wang, et al. Phys. Rev. Lett. \textbf{117}, 187401 (2016).
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2017.MAR.B33.1