Zero-bias peak in InSb nanowires

Zero-bias conductance peaks(ZBP) in InSb nanowires has been reported as a strong signature of Majorana bound states in semiconductors. We made similar superconductor-InSb nanowire-normal contact hybrid devices with NbTiN on bottom gates and found some features that may corresponding to Majorana bound states. By setting a barrier and tuning gates under the nanowire that are in proximity of superconductors, ZBPs appear at finite magnetic field and usually persist for several hundred miliTesla. In different devices, ZBPs appear at different magnetic field, which may result from different chemical potentials. To achieve a so-called hard induced gap and cleaner devices, we are trying various contact materials and etching methods.