APS March Meeting 2015
Volume 60, Number 1
Monday–Friday, March 2–6, 2015;
San Antonio, Texas
Session W23: Focus Session: Anderson Localization
2:30 PM–4:30 PM,
Thursday, March 5, 2015
Room: 202B
Sponsoring
Unit:
DCOMP
Chair: Mark Jarrell, Louisiana State University
Abstract ID: BAPS.2015.MAR.W23.1
Abstract: W23.00001 : Anderson localization for chemically realistic systems*
2:30 PM–3:06 PM
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Abstract
Author:
Hanna Terletska
(Louisiana State University. Ames lab.)
Disorder which is ubiquitous for most materials can strongly effect
their properties. It may change their electronic structures or even cause
their localization, known as Anderson localization. Although,
substantial progress has been achieved in the description of the
Anderson localization, a proper mean-field theory of this phenomenon
for more realistic systems remains elusive. Commonly used theoretical
methods such as the coherent potential approximation and its cluster
extensions [1] fail to describe the Anderson transition, as the
average density of states (DOS) employed in such theories is not
critical at the transition. However, near the transition, due to the
spatial confinement of carriers, the local DOS becomes highly skewed
with a log-normal distribution, for which the most probable and the
typical values differ noticeably from the average value.
Dobrosavljevic et.al., incorporated such ideas in their typical medium
theory (TMT), and showed that the typical (not average) DOS is
critical at the transition. While the TMT is able to capture the
localized states, as a local single site theory it still has several
drawbacks. For the disorder Anderson model in three dimension it
underestimates the critical disorder strength, and fails to capture
the re-entrance behavior of the mobility edge. We have recently
developed a cluster extension of the TMT, which addresses these
drawbacks by systematically incorporating non-local corrections. This
approach converges quickly with cluster size and allows us to
incorporate the effect of interactions and realistic electronic
structure. As the first steps towards realistic material modeling, we
extended our TMDCA formalisms to systems with the off diagonal
disorder and multiple bands structures. We also applied our TMDCA
scheme to systems with both disorder and interactions and found that
correlations effects tend to stabilize the metallic behavior even in
two dimensions. [1] M. Jarrell and H. R. Krishnamurthy, Phys. Rev. B
63, 125102 (2001). [2] V. Dobrosavljevic et. al, Eur. Phys. Lett. 62,
76 (2003). [3] C. E. Ekuma et.al., Phys. Rev. B89, 081107 (2014).
*This work was supported by DOE SciDAC Grant No. DE-FC02-10ER25916 and BES CMCSN Grant No. DE-AC02-98CH10886
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2015.MAR.W23.1