APS March Meeting 2015
Volume 60, Number 1
Monday–Friday, March 2–6, 2015;
San Antonio, Texas
Session T17: Focus Session: Graphene Devices: Function, Fabrication, and Characterization: Graphene Nanostructures
11:15 AM–2:15 PM,
Thursday, March 5, 2015
Room: 102AB
Sponsoring
Unit:
DMP
Chair: Biddut Sarker, Purdue University
Abstract ID: BAPS.2015.MAR.T17.13
Abstract: T17.00013 : Electronic and Optical Properties of Atomically Precise Graphene Nanoribbons and Heterojunctions
1:39 PM–2:15 PM
Preview Abstract
Abstract
Author:
Carlo Antonio Pignedoli
(Empa, Swiss Federal Laboratories for Materials Science and Technology, 8600 D\"ubendorf, Switzerland)
Among graphene related materials, nanoribbons (GNRs) -- narrow stripes of
graphene -- have emerged as promising building blocks for nanoelectronic
devices. The lateral confinement in GNRs opens a bandgap that sensitively
depends on the ribbon width, allowing in principle for the design of
GNR-based structures with tunable properties. However, structuring with
atomic precision is required to avoid detrimental effects induced by edge
defects.
Recently, we have introduced a versatile route for the bottom-up fabrication
of GNRs [1], allowing for the atomically precise synthesis of ribbons with
different shapes as well as heterojunctions be-tween doped and undoped
ribbon segments [2,3]. Here, we report on detailed experimental and
computational investigations of the structural, electronic and optical
properties of selected GNRs and heterojunctions [1-3].
For the case of armchair GNRs of width N$=$7, the electronic band gap and
band dispersion have been determined with high precision [4,5]. Optical
characterization has revealed important excitonic effects [6], which are in
good agreement with ab initio calculations including many-body effects. For
the case of heterojunctions, consisting of seamlessly assembled segments of
pristine (undoped) graphene nanoribbons and deterministically nitrogen-doped
graphene nanoribbons, we find a behavior similar to traditional p--n
junctions. With a band shift of 0.5 eV and an electric field of 2 $\times$
108 V m--1 at the heterojunction, these materials bear a high potential for
applications in photovoltaics and electronics. Finally, we will discuss the
potential of the bottom-up approach with regard to the fabrication of GNRs
exhibiting zigzag edges, which are predicted to exhibit spin-polarized edge
states.
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[1] J. Cai, et. al \textit{Nature} 466, 470 (2010).\\[0pt]
[2] S. Blankenburg, et al. \textit{ACS Nano} \textbf{6}, 2020 (2012).\\[0pt]
[3] J. Cai, et al\textit{. Nature Nanotech.} \textbf{9}, 896 (2014)\\[0pt]
[4] P. Ruffieux, et al. \textit{ACS Nano} \textbf{6}, 6930 (2012).\\[0pt]
[5] H. Soede, et al. \textit{Phys Rev. B}, submitted (2014)\\[0pt]
[6] R. Denk, et al. \textit{Nat. Commun.} \textbf{5}, 4253 (2014)
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2015.MAR.T17.13