A boron nitride - graphene - C$_{60}$ heterostructure

We have fabricated a new van-der-Waals heterostructure composed by BN/graphene/C$_{60}$. We performed transport measurements on the preliminary BN/graphene device finding a sharp Dirac point at the neutrality point. After the deposition of a C$_{60}$ thin film by thermal evaporation, we have observed a significant n-doping of the heterostructure. This suggests an unusual electron transfer from C$_{60}$ into the BN/graphene structure. This BN/graphene/C$_{60}$ heterostructure can be of interest in photovoltaic applications. It can be used to build devices like p-n junctions, where C$_{60}$ can be easily deposited in defined regions of a graphene junction by the use of a shadow mask. Our results are contrasted with theoretical calculations.