Linear magnetoresistance caused by mobility fluctuations in a bulk three-dimensional Dirac semi-metal, Cd$_{3}$As$_{2}$*

Cd$_{3}$As$_{2}$ is a three-dimensional Dirac semi-metal with a variety of exciting transport properties such as exceedingly high mobility and an unusual non-saturating linear magnetoresistance. Given the fundamental interest in bulk band structure and potential for applications based on transport properties, understanding the transport~properties is crucial. We report magnetotransport and tunnel diode oscillation measurements on Cd$_{3}$As$_{2}$, in pulsed magnetic fields up to 65 T and temperatures between 1.5 K and 300 K. We study the unconventional non-saturating linear magnetoresistance up to 65 T and conclude that it is linked to disorder effects. Analysis of quantum oscillations in the magnetoresistance data allow us to further characterize the electronic state and discuss the bulk Fermi surface of Cd3As2.