APS March Meeting 2015
Volume 60, Number 1
Monday–Friday, March 2–6, 2015;
San Antonio, Texas
Session M1: Focus Session: Beyond Graphene - Growth II
11:15 AM–2:15 PM,
Wednesday, March 4, 2015
Room: 001A
Sponsoring
Unit:
DMP
Chair: Gong Gu, University of Tennessee at Knoxville
Abstract ID: BAPS.2015.MAR.M1.7
Abstract: M1.00007 : Synthesis and Characterizations of Two-Dimensional Atomic Layers and Their Heterostructures
12:27 PM–1:03 PM
Preview Abstract
Abstract
Author:
Yi-Hsien Lee
(National Tsing Hua University)
Monolayers of van der Waals (vdw) materials, including graphene,
h-BN, and MoS$_{2}$, have been highlighted
regarding both scientific and industrial aspects due to novel physical
phenomenon inherited from the reduced dimensionality. Layered transition
metal dichalcogenides (TMD) atomic layers, being considered as the thinnest
semiconductor, exhibit great potential for advanced nano-devices. Monolayer
in the class of offered a burgeoning field in fundamental physics, energy
harvesting, electronics and optoelectronics.
Recently, atomically thin heterostructures of TMD monolayer with
various geometrical and energy band alignments are expected to be the key
materials for next generation flexible optoelectronics. The individual TMD
monolayers can be adjoined vertically or laterally to construct diverse
heterostructures which are difficult to reach with the laborious pick
up-and-transfer method of the exfoliated flakes. The ability to produce
copious amounts of high quality layered heterostructures on diverse surfaces
is highly desirable but it has remained a challenging issue. Here, we have
achieved a direct synthesis of various heterostructures of monolayer TMDs.
The synthesis was performed using ambient-pressure CVD with aromatic
molecules as seeding promoters. We discuss possible growth behaviors, and we
examine the symmetry and the interface of these heterostructures using
optical analysis and atomic-resolution scanning TEM. Our method offers a
controllable synthesis of to obtain high-quality heterostructures of TMD
atomic layers with diverse interface geometry.\\[4pt]
[1] Yi-Hsien Lee, et al., Adv. Mater., 24 (17), p.2320-2325 (2012)\\[0pt]
[2] Yi-Hsien Lee, et al. Nano Lett., 13 (4), 1852--1857 (2013)\\[0pt]
[3] Xi Ling, Yi-Hsien Lee*, et al., Nano Lett., 14, p.464--472 (2014)\\[0pt]
[4] Lili Yu, Yi-Hsien Lee, et al, Nano Lett, 14, p.3055-3063 (2014)\\[0pt]
[5] X Zhang, C Lin, Y Tseng, K Huang,Yi-Hsien. Lee*, Nano Letters. (revised)
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2015.MAR.M1.7