Transport Properties of CVD Grown TMDs on Flat and Patterned Substrates

Transition Metal Dichalcogenides (TMDs), MX2 (M$=$Mo, W, etc., X$=$S, Se, Te), have shown great promise for applications as electronic, spintronic and photonic materials. We show growth of MX2 materials under UHV (ultrahigh vacuum) and via CVD (chemical vapor deposition) on both flat and patterned substrates. Deposition on periodically-poled ferroelectric substrates reveals the impact of poling domains and the ability to reversibly invert the transport characteristics from n- to p-doped. 3D geometric patterning of substrates permits the growth across trenches and at angles to the substrate plane leading to modifications of the commonly-addressed in-plane transport properties.