APS March Meeting 2015
Volume 60, Number 1
Monday–Friday, March 2–6, 2015;
San Antonio, Texas
Session G14: Focus Session: Mesoscopic Materials and Devices
11:15 AM–2:15 PM,
Tuesday, March 3, 2015
Room: 008A
Sponsoring
Unit:
DMP
Chair: Nina Markovic, Johns Hopkins University
Abstract ID: BAPS.2015.MAR.G14.1
Abstract: G14.00001 : Nano Josephson Superconducting Tunnel Junctions Direct-patterned in Y-Ba-Cu-O with a Focused Helium Ion Beam
11:15 AM–11:51 AM
Preview Abstract
Abstract
Author:
Shane Cybart
(UC San Diego)
Functional oxide materials are very sensitive to disorder and many
transition from metal to insulator as disorder increases. This phenomenon
has been used for many years to fabricate Josephson junctions in cuprate
high-transition-temperature ($T_{\mathrm{C}})$ superconductors like
YBa$_{\mathrm{2}}$Cu$_{\mathrm{3}}$O$_{\mathrm{7-\delta }}$ (YBCO). In this
approach, ion irradiation is used to selectively disorder a nanoscale region
of material between two superconducting electrodes, that serves as a
Josephson barrier. Historically, the barriers created in this manner have
been tens of nanometers in length which only allowed for the creation of
superconductor-reduced-$T_{\mathrm{C}}$-superconductor-superconductor
junctions. We have reduced the length of the Josephson barriers to just a
few nm by using a 500 pm diameter focused beam of helium ions. The smaller
length of these barriers allows us to change the properties continuously
from reduced $T_{\mathrm{C}}$ superconductor to normal metal, to insulator as
a function of irradiation dose. We present data for several Josephson
junctions fabricated in this manner using controlled doses. Our results are
well-described by the Blonder, Tinkham, Klapwijk model (BTK) for microscopic
electrical transport at an interface between a superconductor and a normal
material. This model uses a single parameter related to barrier strength
(irradiation dose in our experiments) and can describe current-voltage
characteristics for barriers ranging from a strong barrier, such as an
insulator in a tunnel junction, to a weak barrier like a normal metal. In
the case of a strong barrier (a tunnel barrier) the only transport mechanism
for Cooper pairs is direct Josephson tunneling whereas in the case of weaker
barriers both tunneling and Andreev reflection occur. This technique could
provide a reliable method for the realization of reproducible
high-$T_{\mathrm{C}}$ Josephson junctions. I will present details of the
technique and analysis of the results.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2015.MAR.G14.1