Monday, March 2, 2015
11:15AM - 11:27AM
|
|
B2.00001: Improved Performance in MoS$_{2}$ Field-Effect Transistors Contacted by Highly Doped Graphene Electrodes and Passivated by Hexagonal Boron Nitride
Meeghage Perera, Hsun-Jen Chuang, Zhixian Zhou
Preview Abstract |
Monday, March 2, 2015
11:27AM - 11:39AM
|
|
B2.00002: Electrical and optical properties of chemically doped $p$-type MoS$_{2}$
Joonki Suh, Tae-Eon Park, Der-Yuh Lin, Sefaattin Tongay, Junqiao Wu
Preview Abstract |
Monday, March 2, 2015
11:39AM - 11:51AM
|
|
B2.00003: Electrostatic control of polarity of $\alpha $-MoTe$_{2}$ transistors with dual top gates
Shu Nakaharai, Mahito Yamamoto, Keiji Ueno, Yen-Fu Lin, Song-Lin Li, Kazuhito Tsukagoshi
Preview Abstract |
Monday, March 2, 2015
11:51AM - 12:03PM
|
|
B2.00004: Field-Effect Transistors Based on Few-Layered Ambipolar MoSe$_{2}$ and $\alpha $-MoTe$_{2}$
Daniel Rhodes, Nihar Pradhan, Simin Feng, Byoung-Hee Moon, Yan Xin, Sharhriar Memaran, Muhandis Siddiq, Lakshmi Bhaskaran, Stephen Hill, Humberto Terrones, Mauricio Terrones, Ajayan Pulickel, Luis Balicas
Preview Abstract |
Monday, March 2, 2015
12:03PM - 12:15PM
|
|
B2.00005: ABSTRACT WITHDRAWN
Preview Abstract |
Monday, March 2, 2015
12:15PM - 12:27PM
|
|
B2.00006: Conduction and Valence Band Offsets in WSe2-Graphene Heterostructures
Kyounghwan Kim, Stefano Larentis, Babak Fallahazad, Kayoung Lee, Jiamin Xue, David Dillen, Chris Corbet, Emanuel Tutuc
Preview Abstract |
Monday, March 2, 2015
12:27PM - 12:39PM
|
|
B2.00007: Strain induced change in electronic and thermoelectric properties in few layers of MoS$_{2}$
Tribhuwan Pandey, Swastibrata Bhattacharyya, Abhishek K. Singh
Preview Abstract |
Monday, March 2, 2015
12:39PM - 12:51PM
|
|
B2.00008: Tuning the Schottky barrier heights at MoS$_{2}$$\mid$metal contacts: a first-principles study
Mojtaba Farmanbar, Geert Brocks
Preview Abstract |
Monday, March 2, 2015
12:51PM - 1:03PM
|
|
B2.00009: Structural and transport properties of finite length grain boundaries in two-dimensional materials
Yuanxi Wang, Vincent Crespi
Preview Abstract |
Monday, March 2, 2015
1:03PM - 1:15PM
|
|
B2.00010: Intrinsic Electron and Hole Transport in Channel Passivated WSe$_{2}$ Field-Effect Transistors with Graphene Contacts
Hsun jen Chuang, Nirmal Jeevi Ghimire, Jiaqiang Yan, David Mandru, Zhixian Zhou
Preview Abstract |
Monday, March 2, 2015
1:15PM - 1:27PM
|
|
B2.00011: The Effect of Substrate on the Electron Transport Properties of MoS$_{2}$ Field-Effect Transistors
Bhim Chamlagain, Hsun-Jen Chuang, Meeghage Madusanka Perera, Zhixian Zhou
Preview Abstract |
Monday, March 2, 2015
1:27PM - 1:39PM
|
|
B2.00012: Enhanced mobility electrons at the monolayer / multilayer MoS$_2$ homo-interface
Y. Jia, E.J. Lenferink, T. Stanev, N.P. Stern
Preview Abstract |
Monday, March 2, 2015
1:39PM - 1:51PM
|
|
B2.00013: High Powerfactor in single and few-layer MoS2
Ying Wang, Yu Ye, Kedar Hippalgaonkar, Yuan Wang, Xiang Zhang
Preview Abstract |
Monday, March 2, 2015
1:51PM - 2:03PM
|
|
B2.00014: Carrier injection in van der Waals multilayer systems
Marcelo Kuroda, Christopher Coger
Preview Abstract |
Monday, March 2, 2015
2:03PM - 2:15PM
|
|
B2.00015: Ambipolar conduction in MoS$_2$/WSe$_2$ hetero-bilayers
Hema Chandra Prakash Movva, Sangwoo Kang, Amritesh Rai, Sanjay Banerjee
Preview Abstract |
