APS March Meeting 2015
Volume 60, Number 1
Monday–Friday, March 2–6, 2015;
San Antonio, Texas
Session B14: Focus Session: Phase Transitions in Strongly Correlated Electron Systems
11:15 AM–2:15 PM,
Monday, March 2, 2015
Room: 008A
Sponsoring
Unit:
DMP
Chair: Divine Kumah, Yale University
Abstract ID: BAPS.2015.MAR.B14.5
Abstract: B14.00005 : Controlling Magnetism in Spin-Orbit-Driven Oxides with Epitaxial Strain
12:27 PM–1:03 PM
Preview Abstract
Abstract
Author:
Patrick Clancy
(University of Toronto)
The layered perovskite iridates Sr$_{\mathrm{2}}$IrO$_{\mathrm{4}}$ and
Ba$_{\mathrm{2}}$IrO$_{\mathrm{4}}$ are the prototypical spin-orbital Mott
insulators, displaying a novel j$_{\mathrm{eff}} $ = 1/2 ground state
driven by strong 5d spin-orbit coupling effects. Efforts to understand, and
ultimately control, this spin-orbit-induced ground state have led to a surge
of interest in thin film iridates, which offer unique opportunities for the
tuning of electronic and magnetic properties via epitaxial strain. We have
performed complementary resonant magnetic x-ray scattering (RMXS) and
resonant inelastic x-ray scattering (RIXS) measurements on epitaxial thin
film samples of Sr$_{\mathrm{2}}$IrO$_{\mathrm{4}}$ and
Ba$_{\mathrm{2}}$IrO$_{\mathrm{4}}$. By measuring 13 to 50 nm films grown on
a variety of different substrates (PSO, GSO, STO, LSAT), we are able to
investigate the impact of applied tensile and compressive strain on the
magnetic structure, correlation lengths, and characteristic excitations of
these materials. We find that the dispersion of the low-lying magnetic and
orbital excitations is strongly affected by strain-induced structural
changes, and show that epitaxial strain provides an effective method for
tuning three distinct energy scales: the magnetic ordering temperature
(T$_{\mathrm{N}})$, the magnetic exchange interactions (J), and the
non-cubic crystal field splitting ($\Delta_{\mathrm{CEF}})$. Perhaps most
strikingly, we demonstrate that hard x-ray RIXS can be used to perform
detailed magnetic dispersion measurements on thin film samples of 13 nm
($\sim $5 unit cells) or less.\\[4pt]
Work performed in collaboration with H. Gretarsson, A. Lupascu, J.A. Sears,
Z. Nie, Y.-J. Kim (University of Toronto), Z. Islam, M.H. Upton, J. Kim, D.
Casa, T. Gog, A.H. Said (Argonne National Laboratory), J. Nichols, J.
Terzic, S.S.A. Seo, G. Cao (University of Kentucky), M. Uchida, D.G. Schlom,
K.M. Shen (Cornell University), H. Stoll (University of Stuttgart), V.M.
Katukuri, L.Hozoi, J. van den Brink (IFW Dresden).\\[4pt]
[1] A. Lupascu et al, Phys. Rev. Lett. 112, 147201 (2014).
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2015.MAR.B14.5