APS March Meeting 2015
Volume 60, Number 1
Monday–Friday, March 2–6, 2015;
San Antonio, Texas
Session A53: Invited Session: Optoelectronic Response of Low Dimensional Materials
8:00 AM–11:00 AM,
Monday, March 2, 2015
Room: Grand Ballroom C3
Sponsoring
Unit:
DCMP
Chair: Nathaniel Gabor, University of California, Riverside
Abstract ID: BAPS.2015.MAR.A53.2
Abstract: A53.00002 : Hot Carriers and Photoresponse in Graphene
8:36 AM–9:12 AM
Preview Abstract
Abstract
Author:
Qiong Ma
(Massachusetts Institute of Technology)
The photoresponse of materials, which determines the performance of
optoelectronic devices, is governed by energy relaxation pathways of
photo-excited electron-hole pairs. In graphene, with the electron-lattice
coupling strongly quenched by the vanishing electronic density of states, a
novel transport regime is reached in which the photo-generated carrier
population can remain hot while the lattice stays cool. In this talk, I will
first show that light is converted to electrical currents in graphene p-n
junctions through the hot-carrier assisted thermoelectric effect [1]. The
relaxation processes are subsequently examined by photocurrent measurements
at different lattice temperatures, in which we observe a non-monotonic
temperature dependence that can be understood as resulting from the
competition between two hot electron cooling pathways: momentum-conserving
normal collisions that dominate at low temperatures and disorder-assisted
supercollisions that dominate at high temperatures [2]. The peak temperature
depends on carrier density and disorder concentration, thus allowing for an
unprecedented way of controlling graphene's photoresponse.
I will also show our observations of giant long-range photocurrent response
in high-quality graphene transistor devices, which peaks at the charge
neutrality point and exhibits highly ordered anti-symmetric spatial patterns
with alternating photocurrent signs as a function of laser position. These
patterns are strongly sensitive to device size and quality and occur in the
absence of internal electrostatic or material interfaces, which may be
related to the symmetry breaking on sample boundaries assisted by long-range
hot carrier propagation [3].
\textbf{[1]} N. Gabor, J. Song, Q. Ma, N. Nair, T. Taychatanapat, K.
Watanabe, T. Taniguchi, L. Levitov and P. Jarillo-Herrero, Hot
carrier--assisted intrinsic photoresponse in graphene, Science \textbf{334},
648 (2011).
\textbf{[2]} Q. Ma, N. Gabor, T. Andersen, N. Nair, K. Watanabe, T.
Taniguchi and P. Jarillo-Herrero, Competing channels for hot-electron
cooling in graphene, Phys. Rev. Lett$.$ \textbf{112}, 247401 (2014).
\textbf{[3]} Q. Ma, N. Gabor et al., Giant long-range photocurrent patterns
near the charge neutrality point in graphene, in preparation.
To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2015.MAR.A53.2