Bulletin of the American Physical Society

APS March Meeting 2012

Volume 57, Number 1

Monday–Friday, February 27–March 2 2012; Boston, Massachusetts

Session Index

Session J24: Focus Session: Dopants and Defects in Semiconductors - Si and III-V	Show Abstracts
Sponsoring Units: DMP Chair: Socrates Pantelides, Vanderbilt University Room: 256

Tuesday, February 28, 2012 11:15AM - 11:27AM		J24.00001: Dislocation nucleation in Si -- effect of Ge and vacancies Zhi Li, Catalin Picu Preview Abstract
Tuesday, February 28, 2012 11:27AM - 11:39AM		J24.00002: Surface Charge Distribution on Hydrogen-Passivated Silicon Measured by UHV Kelvin Probe Microscopy Pavel Nagornykh, Kristen Burson, William Cullen, Bruce Kane Preview Abstract
Tuesday, February 28, 2012 11:39AM - 11:51AM		J24.00003: Magnetic resonance characterization of silicon nanowires Marco Fanciulli, Matteo Belli, Antonio Vellei, Carmen Canevali, Davide Rotta, Stefano Paleari, Martina Basini Preview Abstract
Tuesday, February 28, 2012 11:51AM - 12:03PM		J24.00004: Ab initio study of confinement effects and hyperfine structure in chalcogen doped Silicon nanostructures Alberto Debernardi, Guido Petretto, Andrea Masse, Marco Fanciulli Preview Abstract
Tuesday, February 28, 2012 12:03PM - 12:15PM		J24.00005: Segregation and diffusion of boron dopants in the Si/SiO$_2$ interface Young Jun Oh, Hyeon-Kyun Noh, Geun-myung Kim, K.J. Chang Preview Abstract
Tuesday, February 28, 2012 12:15PM - 12:27PM		J24.00006: Hybrid functional calculations for native defects and dangling bonds in $\alpha$-Al$_2$O$_3$ Minseok Choi, Anderson Janotti, Chris G. Van de Walle Preview Abstract
Tuesday, February 28, 2012 12:27PM - 12:39PM		J24.00007: Role of oxygen-related defects in hafnia Manish Jain, James R. Chelikowsky, Steven G. Louie Preview Abstract
Tuesday, February 28, 2012 12:39PM - 12:51PM		J24.00008: Vibrational spectroscopy of cast Si used to fabricate solar cells: microscopic properties of nitrogen and oxygen impurities Haoxiang Zhang, Michael Stavola, Mike Seacrist Preview Abstract
Tuesday, February 28, 2012 12:51PM - 1:03PM		J24.00009: The chemical trends of a new defect cluster: DDX centers Jie Ma, Su-Huai Wei Preview Abstract
Tuesday, February 28, 2012 1:03PM - 1:15PM		J24.00010: Valence state manipulation of single Fe impurities in GaAs Paul Koenraad, Juanita Bocquel, Victoria Kortan, Michael Flatte, Richard Campion, Bryan Gallagher Preview Abstract
Tuesday, February 28, 2012 1:15PM - 1:27PM		J24.00011: Local Environment Effects on Single Zn and Mn Acceptors in Gallium Arsenide Nancy Santagata, Donghun Lee, Jay Gupta Preview Abstract
Tuesday, February 28, 2012 1:27PM - 1:39PM		J24.00012: Recombination dynamics of excitons bound to nitrogen isoelectronic centers in GaAs Philippe St-Jean, Gabriel \'Ethier-Majcher, John F. Klem, S\'ebastien Francoeur Preview Abstract
Tuesday, February 28, 2012 1:39PM - 1:51PM		J24.00013: First-principles study of InX (X=P,Sb) semiconductors Oscar D. Restrepo, Rohan Mishra, Wolfgang Windl Preview Abstract
Tuesday, February 28, 2012 1:51PM - 2:03PM		J24.00014: Simple intrinsic defects in GaP and InP Peter A. Schultz Preview Abstract
Tuesday, February 28, 2012 2:03PM - 2:15PM		J24.00015: Defects in GaSb and InAs/GaSb superlattices Jianwei Wang, Yong Zhang Preview Abstract

About APS

The American Physical Society (APS) is a non-profit membership organization working to advance the knowledge of physics.

Headquarters 1 Physics Ellipse, College Park, MD 20740-3844 (301) 209-3200
Editorial Office 100 Motor Pkwy, Suite 110, Hauppauge, NY 11788 (631) 591-4000
Office of Public Affairs 529 14th St NW, Suite 1050, Washington, D.C. 20045-2001 (202) 662-8700

Bulletin of the American Physical Society

APS March Meeting 2012

Volume 57, Number 1

Monday–Friday, February 27–March 2 2012; Boston, Massachusetts

Session Index

Session J24: Focus Session: Dopants and Defects in Semiconductors - Si and III-V

Follow Us

Engage

My APS

Information for

About APS