Transport Properties of Low Temperature Deposited Boron Carbide*

Amorphous B$_{x}$C:H$_{y}$ (x$\sim $4.5, y$\sim $2) is an important radiation hard semiconductor with little known about its electrical transport character. To move forward in using these materials systems, systematic carrier mobility and lifetimes need to be determined. This talk will present Hall transport measurements of thin film B$_{4}$C and B$_{5}$C:H$_{x,}$ as a function of various pre-growth and post-growth sample preparation conditions. Specifically, we have found that as deposited B$_{5}$C:H$_{y}$ films yield hole and electron concentrations near 1E$^{18}$/cm$^{3}$ resulting in a low mobility and ill defined majority carrier while the B$_{4}$C films are dominant in their hole majority carrier at 1E$^{17}$/cm$^{3}$.